Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
III–V material integration, IBM Research Zurich
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
XPS core-level spectra of GaP grown by MOCVD on Si (1 1 2). | Download Scientific Diagram
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers | ACS Nano
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method - ScienceDirect
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy: Journal of Applied Physics: Vol 119, No 22
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters | Crystal Growth & Design
Selective Area Growth - an overview | ScienceDirect Topics
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration | Scientific Reports
a) Selective epitaxial growth of GaN nanowires inside Si N x... | Download Scientific Diagram
A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD | Crystal Growth & Design
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
a) Top SEM view of GaAs/Ge pyramids grown by MOVPE on top of 8-μm-tall... | Download Scientific Diagram
Schematic process flow for (a–d) silicon (100) substrate preparation... | Download Scientific Diagram
Selective-area growth of h-BN. (a) SEM image of as-grown h-BN on the... | Download Scientific Diagram
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | SpringerLink
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions: Applied Physics Reviews: Vol 8, No 2
Advanced transmission electron microscopy investigation of defect formation in movpe-growth of gap on silicon using arsenic initial coverage - ScienceDirect
